Apparatus for performing epitaxial growth of ZNSE crystal from melt thereof
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United States of America Patent
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Nov 6, 1990
Issued Date -
N/A
app pub date -
Aug 25, 1987
filing date -
Jul 14, 1982
priority date (Note) -
Expired
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Abstract
In conducting a liquid phase epitaxial growth of a Zn crystal on a substrate wherein a batch of Se melt serving as a solvent is used and relying on a vapor pressure controlling technique and a temperature difference method, a Zn vapor pressure controlling region is disposed, via the Se melt, in a direction vertical to the surface of the substrate which is contained in the growth region, and a ZnSe source crystal is disposed in such a way that it is supplied into the Se melt in a lateral direction of this melt. Whereby, a ZnSe single crystal having a good cyrstal perfection, and a good linearity of the thickness of the grown crystal relative to time can be obtained.
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