Method of producing carbon-doped amorphous silicon thin film
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United States of America Patent
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Nov 6, 1990
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N/A
app pub date -
Sep 14, 1989
filing date -
Sep 29, 1988
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Abstract
A method of producing a carbon-doped amorphous silicon thin film upon a substrate comprising the steps of growing a carbon-doped amorphous silicon layer by plasma assisted chemical vapor deposition, including generating a glow discharge in a gaseous mixture of a silane gas and a hydrocarbon gas, and exposing said carbon-doped amorphous silicon layer to a plasma in a gas containing hydrogen to achieve a resultant layer having a prescribed value of photoconductivity.
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