Method for forming a silicon membrane with controlled stress
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United States of America Patent
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Oct 30, 1990
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N/A
app pub date -
Sep 13, 1988
filing date -
Sep 13, 1988
priority date (Note) -
Expired
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Abstract
A method for fabricating a silicon membrane with predetermined stress characteristics. A silicon substrate is doped to create a doped layer as thick as the desired thickness of the membrane. Stress within the doped layer is controlled by selecting the dopant based on its atomic diameter relative to silicon and controlling both the total concentration and concentration profile of the dopant. The membrane is then formed by electrochemically etching away the substrate beneath the doped layer.
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