Metal oxide semiconductor gated turn-off thyristor having an interleaved structure

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United States of America Patent

PATENT NO 4963950
SERIAL NO

07188887

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A depletion mode thyristor includes a plurality of regenerative segments and a plurality of non-regenerative segments, each of which is elongated in a first direction. Regenerative and non-regenerative segments are interleaved in a second direction perpendicular to said first direction. A plurality of regenerative segments may be disposed between adjacent non-regenerative segments. Adjacent regenerative or non-regenerative segments are spaced apart by gate electrode segments which are effective, upon application of an appropriate bias voltage, for pinching off the regenerative segments to force the current therein to transfer to the non-regenerative segments to turn the device off. This structure enables large quantities of current to be transferred from regenerative segments to non-regenerative segments during turn-off without inducing detrimental current crowding.

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Patent Owner(s)

Patent OwnerAddress
SILICON POWER CORPORATION958 MAIN STREET SUITE A CLIFTON PARK NY 12065

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Baliga, Bantval J Schenectady, NY 83 4172
Chang, Hsueh-Rong Scotia, NY 31 1373

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