Metal oxide semiconductor gated turn-off thyristor having an interleaved structure
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
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Oct 16, 1990
Grant Date -
N/A
app pub date -
May 2, 1988
filing date -
May 2, 1988
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A depletion mode thyristor includes a plurality of regenerative segments and a plurality of non-regenerative segments, each of which is elongated in a first direction. Regenerative and non-regenerative segments are interleaved in a second direction perpendicular to said first direction. A plurality of regenerative segments may be disposed between adjacent non-regenerative segments. Adjacent regenerative or non-regenerative segments are spaced apart by gate electrode segments which are effective, upon application of an appropriate bias voltage, for pinching off the regenerative segments to force the current therein to transfer to the non-regenerative segments to turn the device off. This structure enables large quantities of current to be transferred from regenerative segments to non-regenerative segments during turn-off without inducing detrimental current crowding.
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- 15 United States
- 10 France
- 8 Japan
- 7 China
- 5 Korea
- 2 Other
Patent Owner(s)
Patent Owner | Address | |
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SILICON POWER CORPORATION | 958 MAIN STREET SUITE A CLIFTON PARK NY 12065 |
International Classification(s)
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
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Baliga, Bantval J | Schenectady, NY | 83 | 4172 |
# of filed Patents : 83 Total Citations : 4172 | |||
Chang, Hsueh-Rong | Scotia, NY | 31 | 1373 |
# of filed Patents : 31 Total Citations : 1373 |
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Maintenance Fees
Fee | Large entity fee | small entity fee | micro entity fee | due date |
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Fee | Large entity fee | small entity fee | micro entity fee |
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Surcharge after expiration - Late payment is unavoidable | $700.00 | $350.00 | $175.00 |
Surcharge after expiration - Late payment is unintentional | $1,640.00 | $820.00 | $410.00 |
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