Semiconductor memory device with dual selection circuitry including CMOS and bipolar transistors

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United States of America Patent

PATENT NO 4961164
SERIAL NO

07430907

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Abstract

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A semiconductor memory device is provided which includes a plurality of memory arrays each including main word lines, sub word lines to which a plurality of memory cells are connected, and a decoder which selectively connects the sub word lines to the main word lines. The main word lines are relatively short, since they are isolated electrically between memory arrays, and their resistance can thus be relatively low. The main word lines are not directly connected with a plurality of memory cells, and this results in a smaller capacitance coupled to the main word lines than is customarily the case. Consequently, the semiconductor memory device can have an enhanced operating speed.

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Patent Owner(s)

Patent OwnerAddress
HITACHI LTD6-6 MARUNOUCHI 1-CHOME CHIYODA-KU TOKYO 1008280 JAPAN

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Arai, Toshikazu Ohme, JP 9 59
Higuchi, Hiroshi Ohme, JP 265 6026
Miyaoka, Shuuichi Ohme, JP 13 98
Odaka, Masanori Kodaira, JP 34 419

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