Radiation or light detecting semiconductor element containing heavily doped p-type stopper region
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United States of America Patent
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Oct 2, 1990
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N/A
app pub date -
Feb 6, 1985
filing date -
Sep 18, 1982
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Abstract
A radiation or light detecting semiconductor element comprises a p-type monocrystalline silicon substrate having a high specific resistance of about 10,000 ohm-cm, a stopper layer formed in a part of a first principal surface of the substrate and diffused to provide a p-type conductivity material, an electrode diffusion layer of p.sup.+ type material formed in at least part of the remaining part of the first principal surface not provided with the stopper layer, so as to be diffused into an n-type conductivity material, a metal (silicon) oxide layer formed on substantially the entire first principal substrate surface, a first aluminum electrode provided through the metal oxide layer and electrically connected to the electrode diffusion layer, and a second electrode of laminated Cr-Ni-Au deposited electrically conductively on a second principal surface of the substrate. A method for producing the element is also disclosed.
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