MCT providing turn-off control of arbitrarily large currents
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United States of America Patent
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Sep 18, 1990
Grant Date -
N/A
app pub date -
Sep 1, 1988
filing date -
Sep 1, 1988
priority date (Note) -
Expired
status (Latency Note)
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Abstract
An MOS controlled thyristor (MCT) provides insulated gate control of turn-off from the regenerative state for arbitrarily large currents. An emitter region of the thyristor is provided with a high injection efficiency portion which is resistively connected to an ohmic contact to the main power electrode for that emitter region. The turn-off gate controls a channel region through that emitter region which connects a source region to the adjacent base region. During gate induced turn-off, the resistive connection of the high efficiency emitter region to the power electrode provides an additional voltage drop over that of a forward biased junction to encourage the flow of carriers through the channel region into the source region to bypass the emitting junction.
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