Semiconductor device with composite electrode
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United States of America Patent
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-
Sep 4, 1990
Issued Date -
N/A
app pub date -
Jan 21, 1988
filing date -
Jun 26, 1981
priority date (Note) -
Expired
status (Latency Note)
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Abstract
Provided is a semiconductor device having a single continuous wiring layer in which a predetermined portion thereof is made of a semiconductor material, and the remaining portion thereof is made of a metal compound of the semiconductor material. The predetermined portion of the wiring layer preferably constitutes the gate electrode of a field effect transistor.
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