Method for the fabrication of an alternation of layers of monocrystalline semiconducting material and layers of insulating material
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United States of America Patent
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Aug 28, 1990
Grant Date -
N/A
app pub date -
Apr 4, 1989
filing date -
Apr 5, 1988
priority date (Note) -
Expired
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Abstract
A method for making a layer of monocrystalline, semiconducting material on a layer of insulating material is disclosed. For this, epitaxial growth is achieved in a cavity closed by layers of dielectric materials, using seeds of monocrystalline, semiconducting material of a substrate. This method thus enables a 3D integration of semiconductor components.
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