Integrated circuit device
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United States of America Patent
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-
Aug 21, 1990
Issued Date -
N/A
app pub date -
Jan 3, 1985
filing date -
Jun 13, 1975
priority date (Note) -
Expired
status (Latency Note)
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Abstract
An integrated circuit device includes insulated-gate field effect transistors employing a semiconductor gate electrode used as a logic element. Part of the input interconnection layer serves as the semiconductor gate electrode and orthogonally intersects with a conductive layer. The logic circuits are interconnected to constitute a random gate logic circuit that can be operated at high speeds and formed with a high density.
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