Semiconductor integrated circuit
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United States of America Patent
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-
Aug 14, 1990
Issued Date -
N/A
app pub date -
Jan 15, 1986
filing date -
Apr 24, 1980
priority date (Note) -
Expired
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Abstract
A semiconductor integrated circuit having a polycrystalline light interrupting layer covering at least one P-N junction. Photo leakage currents produced at the P-N junction by irradiation with light are thus decreased, and malfunctions are prevented.
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