Attenuation controlling by means of a monolithic device
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United States of America Patent
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-
Aug 7, 1990
Grant Date -
N/A
app pub date -
Dec 23, 1987
filing date -
Dec 23, 1987
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A monolithic device for controlling the transmission of RF energy. The device comprises doped regions selectively implanted along two lateral lines in a buffer layer disposed on a semi-insulating substrate. Two ground conductors are disposed on said doped region to form ohmic contacts therewith, and a signal conductor is disposed directly on the buffer layer between the two ground conductors to form a Schottky contact. The buffer layer is responsive to a DC potential applied between the signal and ground conductors for selectively attenuating RF energy transmitted through the device.
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