Thin film transistor and method of making the same
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United States of America Patent
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Jul 24, 1990
Issued Date -
N/A
app pub date -
Jan 4, 1988
filing date -
Jan 16, 1987
priority date (Note) -
Expired
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Abstract
A source electrode and a drain electrode are formed apart on an insulating substrate, and a semiconductor layer is formed on the substrate between the source and drain electrodes. An insulating organic molecular film is formed all over the source and drain electrodes and the semiconductor layer. Ions are implanted into a selected top surface region of the insulating organic molecular film, corresponding to the semiconductor layer, by which chains of molecules in the surface region are cut to form free carbon, providing a conductive gate electrode.
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