Contrast enhanced photolithography
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United States of America Patent
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Jul 17, 1990
Issued Date -
N/A
app pub date -
Mar 6, 1989
filing date -
Mar 27, 1986
priority date (Note) -
Expired
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Abstract
The contrast and sharpness of photoresist images is enhanced by depositing a layer of a photobleachable compound onto the photoresist layer. The photobleachable layer is sensitive to the light used to expose the photoresist and forms a contrast enhancement layer (CEL) on the photoresist layer. Fulgides and photochromic butyrolactones are selected for forming the photobleachable layer. Such compounds can be deposited from a hydrocarbon solution, such as toluene, and are soluble in the standard alkali, photoresist developers. The process is particularly advantageous for producing integrated circuits.
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