Dopant of arsenic, method for the preparation thereof and method for doping of semiconductor therewith
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United States of America Patent
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May 29, 1990
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N/A
app pub date -
Jul 17, 1989
filing date -
Jul 18, 1988
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Expired
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Abstract
The dopant body of arsenic for doping of a semiconductor substrate, e.g., silicon wafer, is a sintered body of a powder mixture comprising silicon arsenide, silica and, optionally, arsenic oxide in a specified proportion. The dopant body can be easily prepared and has various advantages over conventional elementary arsenic powder or a shaped body of silicon arsenide alone in respect of the high mechanical strength of the dopant body and absence of the problem of environmental contamination.
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