Simplified method of fabricating lightly doped drain insulated gate field effect transistors
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United States of America Patent
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May 8, 1990
Grant Date -
N/A
app pub date -
Apr 27, 1988
filing date -
Apr 27, 1988
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A lightly doped drain in an IGFET is provided by fabricating the transistor in a epitaxial layer lightly doped in the conductivity type of the channel for the device. The laterally reduced dopant concentration of the drain, and a lightly doped source if desired, is provided by leaving portions of the epitaxial layer unmodified.
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