MOS power structure with protective device against overvoltages and manufacturing process therefor
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United States of America Patent
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Apr 10, 1990
Issued Date -
N/A
app pub date -
Jun 15, 1989
filing date -
Dec 17, 1986
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A MOS power structure made up of at least one MOS cell with gate electrode, drain electrode, source electrode, well-region and of a bi-polar parasitic transistor provided with a protective device for the gate and drain against overvoltages. The protective device consists of a further bi-polar transistor with optional addition of a zener diode.
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