Method of making an integrated light-triggered and light-quenched static induction thyristor
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United States of America Patent
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Apr 3, 1990
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N/A
app pub date -
Apr 14, 1989
filing date -
Sep 26, 1986
priority date (Note) -
Expired
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Abstract
An integrated light-triggered and light-quenched static induction thyristor and fabrication process thereof adapted in such a manner that an integrated SIPT operates in the normal mode in order to enhance current gain, tail current generated at the light-quenching time is reduced in order to enhance turn-off gain, and an buried-gate type of light-triggered static induction thyristor and a photo-darlington circuit composed of a first and second static induction phototransistors are integrated on a high-resistivity substrate in order to permit manufacturing said thyristor compact as a whole in facilitated processes.
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