Monolithically integrated bidirectional lateral semiconductor device with insulated gate control in both directions and method of fabrication
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United States of America Patent
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Mar 27, 1990
Grant Date -
N/A
app pub date -
May 19, 1987
filing date -
May 19, 1987
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A monolithically integrated reverse conducting lateral insulated gate semiconductor device includes an inherent four layer structure which supplies a sufficient base drive to turn on an inherent lateral transistor under forward bias conditions. Under reverse bias conditions, an inherent five layer structure is activated to provide for high current density low voltage reverse conduction in the device. Forward and reverse current flow can be interrupted by the application of an appropriate bias to the same insulated gate electrode. The disclosed semiconductor device achieves improved current density and concomitantly reduced cell size.
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