Buried oxide field isolation structure with composite dielectric
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United States of America Patent
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Feb 20, 1990
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N/A
app pub date -
Sep 16, 1988
filing date -
Dec 29, 1986
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Abstract
Improved buried oxide (BOX) field isolation in a silicon structure which has a trench with a curved side wall is achieved by employing reactive ion etching or local oxidation of silicon to produce the curved side wall. Electric field enhancement which normally occurs at sharp corners in silicon structures employing conventional buried oxide field isolation is minimized by the curved side wall. The buried oxide field isolation in the silicon structure is provided by chemical vapor deposited SiO.sub.2 atop thermally produced SiO.sub.2 in the field region.
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