Polycrystalline rhombohedral boron nitride and method of producing the same
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United States of America Patent
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Feb 13, 1990
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N/A
app pub date -
Jul 3, 1986
filing date -
Mar 4, 1985
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Expired
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Abstract
The specification discloses a polycrystalline boron nitride of high purity and high density consisting essentially of rhombohedral crystals in which the three-fold rotation axes, parallel to the c-axis in the notation of hexagonal crystal system, of the crystals have a preferred orientation. The polycrystalline rhombohedral boron nitride can be obtained as bulk or thin film articles with desired shapes by chemical vapor deposition including the steps of introducing a source gas of boron and a source gas into a reactor containing a heated substrate and depositing boron nitride onto the heated substrate, wherein a diffusion layer of the source gas of nitrogen and/or the carrier gas is formed around the substrate. The polycrystalline rhombohedral boron nitride such obtained is very useful in applications such as crucibles for melting semiconductors, various jigs for high temperature services, high-frequency insulator, microwave transmission window and source material of boron for semiconductor. Further, the boron nitride is also ideal as a starting material for high pressure phase cubic boron nitride.
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