Reduced-beak planox process for the formation of integrated electronic components
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United States of America Patent
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Jan 30, 1990
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N/A
app pub date -
Nov 23, 1987
filing date -
Oct 23, 1984
priority date (Note) -
Expired
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Abstract
A method for reducing birdbeaks formed during a planox process is disclosed. On a silicon substrate (1), oxide (2) and nitride (3) are formed. The oxide and nitride are then selectively etched using a single plasma having high selectivity with respect to silicon and a photoresist mask (4). The high selectivity toward silicon is achieved by use of a CHF.sub.3 +CO.sub.2 plasma under conditions of 30:1 oxide/silicon selectivity. Field oxide regions (5) with reduced birdbeaks can then be formed.
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