Adjustable windage method and mask for correction of proximity effect in submicron photolithography
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United States of America Patent
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Jan 23, 1990
Issued Date -
N/A
app pub date -
Oct 25, 1988
filing date -
May 13, 1987
priority date (Note) -
Expired
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Abstract
In order to solve the problem of the proximity effects which occurs in the fabrication of integrated circuit devices, a facile method is provided for automatically creating a new pattern in which variably spaced windage correction is applied over the mask. This permits the utilization of conventional design fabrication rules and systems without the concomitant problem of producing small feature sizes in isolated structures. The method produces highly desirable chip masks and is readily implemented on commercially available CAD systems presently being employed for the production of circuit masks. The method is automatic and extremely easily implemented.
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