Method for decontamination of a chamber used in vacuum processes for deposition, etching and/or growth of high purity films
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United States of America Patent
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Jan 9, 1990
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N/A
app pub date -
Dec 2, 1987
filing date -
Dec 2, 1986
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Expired
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Abstract
A decontamination system for processes for deposition, etching and/or growth of high purity films, particularly applicable to semiconductor technology. After introducing the products concerned with a process into a chamber and after creating a vacuum in the chamber, the chamber is decontaminated by a series of intermittent inflows of non-contaminating gas and subsequent pressure varying operations.
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