Method for doping silicon wafers using Al.sub.2 O.sub.3 /P.sub.2 O.sub.5 composition

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United States of America Patent

PATENT NO 4891331
SERIAL NO

07146503

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Abstract

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A doping composition and method for doping a silicon wafer with phosphorous in which the composition contains (A) a high purity Al.sub.2 O.sub.3 /P.sub.2 O.sub.5 compound having a mole ratio of P.sub.2 O.sub.5 /Al.sub.2 O.sub.3 of about 1/1 to 4/1: and (B) a vehicle for the Al.sub.2 O.sub.3 /P.sub.2 O.sub.5 compound for application as a paste to provide a thin layer on the silicon wafer which is fired to provide an easily-removed powdery layer on the wafer.

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Patent Owner(s)

Patent OwnerAddress
OWENS-ILLINOIS TELEVISION PRODUCTS INC A CORP OF DENot Provided

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Rapp, James E Oregon, OH 10 41

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