Method of fabricating n-type and p-type microcrystalline semiconductor alloy material including band gap widening elements
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United States of America Patent
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Jan 2, 1990
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N/A
app pub date -
Mar 28, 1988
filing date -
Jul 27, 1987
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Abstract
A method of fabricating doped microcrystalline semiconductor alloy material which includes a band gap widening element through a glow discharge deposition process by subjecting a precursor mixture which includes a diluent gas to an a.c. glow discharge in the absence of a magnetic field of sufficient strength to induce electron cyclotron resonance.
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