Process for borosilicate glass films for multilevel metallization structures in semiconductor devices
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United States of America Patent
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Jan 2, 1990
Issued Date -
N/A
app pub date -
Jun 29, 1988
filing date -
Sep 15, 1986
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Expired
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Abstract
A process for forming a borosilicate glass layer on a sharply profiled surface of a semiconductor device comprising the steps of: heating the device; conveying the device through a deposition chamber at atmospheric pressure; directing silane gas, diborane gas, and oxygen into the chamber and the surface of the heated device where they react and form a borosilicate glass layer on the surface so that smooth corners are formed for the sharply profiled surface of the semiconductor device.
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