Method for making a silicon-on-insulator substrate
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United States of America Patent
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-
Jan 2, 1990
Grant Date -
N/A
app pub date -
Jan 13, 1986
filing date -
Jan 13, 1986
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A mask of insulating material is formed on the major surface of a semiconductor wafer, the mask including apertures to the wafer surface. A layer of monocrystalline silicon is then formed through the apertures and over the mask. The silicon within each aperture is next replaced with an insulating plug and epitaxial silicon is grown from the remaining portions of the monocrystalline silicon layer so as to form a continuous monocrystalline silicon sheet overlying the mask and plug.
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