Monolithically integrated semiconductor device containing bipolar junction transistors, CMOS and DMOS transistors and low leakage diodes and a method for its fabrication
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United States of America Patent
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Dec 12, 1989
Issued Date -
N/A
app pub date -
Nov 28, 1988
filing date -
Jan 30, 1986
priority date (Note) -
Expired
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Abstract
Disclosed is a monolithic integrated semiconductor device which may contain specimens of seven different circuit components; namely: lateral N-MOS and lateral P-MOS transistors (CMOS), vertical N-DMOS and vertical P-DMOS transistors, vertical NPN bipolar transistors, vertical PNP bipolar transistors with isolated collector and low leakage junction diodes as well as a process for fabricating such a device.
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