Power transistor with improved resistance to direct secondary breakdown
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United States of America Patent
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Dec 12, 1989
Grant Date -
N/A
app pub date -
Dec 21, 1987
filing date -
Dec 30, 1986
priority date (Note) -
Expired
status (Latency Note)
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Abstract
This power transistor comprises a plurality of elementary transistors, also indicated as 'fingers', having their emitter terminals mutually connected and forming a common emitter terminal, collector terminals also mutually connected and forming a common collector terminal, and base terminals connected to at least one current source. Each elementary transistor is part of a circuit comprising a diode forming, together with the elementary transistor, a current mirror, so that the collector current passing through the elementary transistor is far less sensitive to the temperature gradients which originate inside the power transistor.
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