Method for isolating a semiconductor element
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United States of America Patent
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Dec 5, 1989
Issued Date -
N/A
app pub date -
Mar 10, 1989
filing date -
Jan 13, 1987
priority date (Note) -
Expired
status (Latency Note)
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Abstract
According to the invention, on a silicon substrate is formed an insulation silicon oxide film with the etching rate thereof increasing as one goes away from the substrate, on the insulation silicon oxide film is formed a first silicon nitride film defining the width of the element isolation region, the insulation silicon oxide film is provided with a slope by isotropic etching with the first silicon nitride film as mask, and a lower portion of the insulation silicon oxide film is isotropically etched, with the sloped portion of the insulation silicon oxide film being masked by a second silicon nitride film.
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