Process for the production of low carbon silicon

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United States of America Patent

PATENT NO 4877596
SERIAL NO

07080879

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Abstract

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Silicon having a low carbon content is produced by removing carbon from molten silicon by heating the molten silicon to temperatures of 1420.degree. to 1900.degree. C. and establishing a temperature gradient of 30.degree. to 400+ K. in the melt.

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Patent Owner(s)

Patent OwnerAddress
BAYER SOLR GMBHBERTHELSDORFER STRASSE 113 1 D 095999 FREIBERG

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Koch, Wolfgang Krefeld, DE 76 824
Schwirtlich, Ingo Krefeld, DE 30 203
Woditsch, Peter Krefeld, DE 23 201

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