Amorphous photoelectric converting device
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United States of America Patent
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Oct 24, 1989
Grant Date -
N/A
app pub date -
Sep 9, 1988
filing date -
Sep 17, 1987
priority date (Note) -
Expired
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Abstract
An amorphous photoelectric converting device that remains efficient despite exposure to heat over long periods of time is formed by placing one on top of the other a plurality of photovoltaic elements each comprising a thin film of p-i-n structure. The p-type layer and the n-type layer of adjacent elements are made of microcrystalline silicon so that good ohmic contact is established, and the p-type layer of microcrystalline silicon contains boron in an amount sufficient to neutralize the donor atoms which diffuse from the adjacent n-type layer when the device is left to stand at high temperatures for a long period of time. The amount of boron, however, is limited to such an extent that the boron atoms do not adversely affect the initial desired characteristics of the device. A preferred range of boron levels is 3.times.10.sup.20 to 1.times.10.sup.21 atoms/cm.sup.3.
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