Method of fabricating a semiconductor beam lead device
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Aug 22, 1989
Issued Date -
N/A
app pub date -
Dec 14, 1987
filing date -
Apr 18, 1986
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A semiconductor device and associated method of fabrication in which the device includes a semiconductor substrate having a cavity therein extending in a frame pattern. An insulating layer such as one of silicon nitride is deposited in the cavity followed by the deposition of polysilicon to substantially fill the cavity and provide structural support. An epitaxy layer is formed over the surface of the substrate along with a second insulating layer having windows defined therein for enabling ohmic contact with the epitaxy layer and substrate, resectively. Metallization is deposited to form separate beam leads to provide ohmic contact at the epitaxy layer and substrate.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully