Method for epitaxial growth of compound semiconductor using MOCVD with molecular layer epitaxy
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Aug 22, 1989
Grant Date -
N/A
app pub date -
Nov 20, 1987
filing date -
Nov 22, 1986
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A method for epitaxial growth of compound semiconductor containing three component elements, two component elements thereof being the same group elements, in which three kinds of compound gases each containing different one of the three component elements are cyclically introudced, under a predetermined pressure for a predetermined period respectively, onto a substrate enclosed in an evacuated crystal growth vessel so that a single crystal thin film of the compound semiconductor is formed on the substrate.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully