Temperature controlled anode for plasma dry etchers for etching semiconductor
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United States of America Patent
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Aug 22, 1989
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N/A
app pub date -
Jul 18, 1988
filing date -
Jul 18, 1988
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Expired
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Abstract
A plasma dry etch chamber is provided with an anode plate which has a cooling jacket which extends radially outwardly from a cooling core to an extent corresponding to the radial dimension of a silicon wafer work product. In order to further reduce deposit formation, the outer perimeter of the anode is designed to reduce the effects of polymer deposition.
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