Stop for integrated circuit diaphragm
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United States of America Patent
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-
Aug 1, 1989
Grant Date -
N/A
app pub date -
Sep 3, 1987
filing date -
Sep 3, 1987
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A semiconductor transducer with a diaphragm is constructed utilizing a substrate wherein a first portion of that first face is etched to a planar level to achieve a second portion as a physical stop on this substrate, the physical stop having a planar stop face, a sloping sided cavity is etched into a semiconductor wafer from a first face thereof to form a deformable diaphragm in this semiconductor wafer. The semiconductor wafer is anodically bonded to the substrate planar level, with the physical stop located in the cavity and with the stop face acting to prohibit excess movement of the diaphragm. The foregoing abstract is merely a resume of one general application, is not a complete discussion of all principles of operation or applications, and is not to be construed as a limitation on the scope of the claimed subject matter.
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