Semiconductor laser device
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United States of America Patent
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Jul 25, 1989
Grant Date -
N/A
app pub date -
Dec 15, 1987
filing date -
Dec 15, 1986
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A semiconductor laser device comprising a substrate of a first conductivity type having a mesa; a first semiconductor layer of a second conductivity type which is formed on the upper surface of the substrate other than the mesa to form a flat plane including the top face of the mesa; a laser oscillation region which is formed on the flat plane and includes an active area for laser oscillation; and a multi-layer structure burying the laser oscillation region, the multi-layer structure comprising a high resistance layer formed on the first semiconductor layer and burying both sides of the laser oscillation region, and a second semiconductor layer of the first conductivity type formed on the high resistance layer.
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