Thin film transistor
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United States of America Patent
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Jul 18, 1989
Grant Date -
N/A
app pub date -
Jan 20, 1988
filing date -
Jan 23, 1987
priority date (Note) -
Expired
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Abstract
In a thin film transistor which has an active layer formed between source and drain electrodes, a gate insulating film formed in contact with the active layer, and a gate electrode formed in contact with the gate insulating film, the photoconductivity of the active layer is reduced by forming the active layer of amorphous silicon carbide (a-Si.sub.1-x C.sub.x) whose carbon content x is greater than 0.1.
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