Method of manufacturing a DMOS
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United States of America Patent
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Jul 18, 1989
Issued Date -
N/A
app pub date -
Oct 23, 1987
filing date -
Oct 24, 1986
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A method of manufacturing a DMOS is disclosed. On a polysilicon gate layer, a multiple dielectric mask including studs (71) defines a window (70) for body implantation (80) into a substrate. Unmasked regions of polysilicon and substrate are oxidized to form oxide regions (84,85,88). Subsequent to the removal of the protective studs and a portion of the oxide, remaining oxide regions (90,91,92) act as a mask for source implantation (99,100).
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