Method for selectively depositing metal on a substrate

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United States of America Patent

PATENT NO 4849260
SERIAL NO

07068910

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A wafer, in which at least one via hole is made in an insulating film formed on the substrate, is held on a wafer holder in a reaction chamber under reduced pressure, WF.sub.6 gas is introduced into the reaction chamber so that a first metallic film of W is formed on the substrate in the via hole. The additional WF.sub.6 gas and H.sub.2 gas are introduced into the chamber and light from a heating lamp is directed onto the wafer such that a difference in temperature is created between the insulating film and the first metallic film such that a second metallic film of W is formed only on the first metallic film. The temperature difference is created because of the differences of the absorption ratios of infrared components of the light between the insulating film, the substrate and the first metallic film. The WF.sub.6 gas and H.sub.2 gas are made to flow in flat form substantially parallel to the surface of the wafer and an inert gas, such as Ar, is made to flow toward the surface of the wafer to control the flow of WF.sub.6 and H.sub.2.

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Patent Owner(s)

Patent OwnerAddress
NIHON SINKU GIJUTSU KABUSIKI KAISHA A CORP OF JAPAN2500 HAGISONO CHIGASAKI-SHI KANAGAWA-KEN

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ikuta, Tetsuya Kanagawa, JP 47 555
Kusumoto, Yoshiro Kanagawa, JP 6 179
Nakayama, Izumi Kanagawa, JP 11 281
Suzuki, Akitoshi Kanagawa, JP 67 697
Takakuwa, Kazuo Kanagawa, JP 6 179

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