Solid diffusion source of GD oxide/P205 compound and method of making silicon wafer
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United States of America Patent
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Jul 11, 1989
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N/A
app pub date -
May 19, 1988
filing date -
May 19, 1988
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Expired
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Abstract
A doping composition having a high rate of P.sub.2 O.sub.5 evolution as indicated by a thick deposited glassy film of about 1500-2000 angstroms at a doping temperature of only 900.degree. C. for one hour, the composition comprising a gadolinium oxide/P.sub.2 O.sub.5 compound.
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