Semiconductor laser device having optical guilding layers of unequal resistance
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United States of America Patent
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Jul 4, 1989
Grant Date -
N/A
app pub date -
Dec 22, 1987
filing date -
Dec 26, 1986
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A semiconductor laser device comprising a double-heterostructure that is composed of an active layer and a pair of cladding layers sandwiching the active layer therebetween, a striped structure in which current injected into the laser device is confined, the striped structure being constituted by a part of the double-heterostructure, and optical guiding layers positioned between one cladding layer and the active layer and between the active layer and the other cladding layer, wherein the resistance of one optical guiding layer positioned at the striped structure side is higher than that of the other optical guiding layer positioned opposite to the striped structure side.
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