Low temperature chemical vapor deposition of silicon dioxide films
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jul 4, 1989
Issued Date -
N/A
app pub date -
Jun 29, 1987
filing date -
Jun 14, 1985
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A method for low temperature chemical vapor deposition of an SiO.sub.2 based film on a semiconductor structure using selected alkoxysilanes, in particular tetramethoxysilane, trimethoxysilane and triethoxysilane which decompose pyrolytically at lower temperatures than TEOS (tetraethoxysilanes). Ozone is introduced into the reaction chamber to increase deposition rates, lower reaction temperatures and provide a better quality SiO.sub.2 film by generating a more complete oxidation. Ozone is also employed as a reactant for doping SiO.sub.2 based films with oxides of phosphorus and boron.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully