CVD reactor and gas injection system
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United States of America Patent
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-
May 30, 1989
Issued Date -
N/A
app pub date -
Oct 27, 1987
filing date -
Nov 8, 1985
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A CVD reactor has a unique geometry to control the thickness of a film formed on the surface of a substrate. The reactor is approximately cylindrical in shape. The base of the reactor is inclined at an angle of approximately 3.degree.-5.degree. from the vertical and has a central platform with a recessed well. The substrate is placed in the well so that the surface of the substrate on which the film is deposited does not protrude above the platform surface. The reactant gases are mixed in a region adjacent the cylindrical wall of the reactor and flow radially inward across the wafer surface. The thickness of the deposited film is controlled by contouring a plate positioned opposite the wafer surface so that the distance between the wafer surface and the plate, and hence the deposition rate, is controlled.
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