EEPROM programming switch operable at low VCC
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United States of America Patent
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May 16, 1989
Grant Date -
N/A
app pub date -
Jan 20, 1988
filing date -
Jan 20, 1988
priority date (Note) -
Expired
status (Latency Note)
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Abstract
An EEPROM or EPPROM programming switch operable at low circuit voltage (V.sub.CC) includes a first pair of native field effect transistors interconnected between a word line and a programming voltage potential and a second pair of serially connected native transistor devices connected between a charge pump node and the programming voltage. The gate electrodes of the first pair of transistors are connected to the charge pump node and the gate electrodes of the second pair of transistors are connected to the word line. Decoding means is provided for preventing charge accumulation of the word line when the word line is not selected and for permitting charge accumulation of the word line when the word line is selected for programming. The common terminals of the first and second transistors and the third and fourth transistors are connected to a bias circuit for preventing conduction of the transistors when the word line has not been selected for programming.
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