Structure for inhibiting dopant out-diffusion
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United States of America Patent
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May 9, 1989
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app pub date -
Jul 25, 1988
filing date -
Apr 13, 1984
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Abstract
A method for inhibiting out-diffusion of dopants from polycrystalline or single crystal silicon substrates of high speed semiconductor devices into metal silicide conductive layers disposed on the substrate comprises interposing a refractory metal nitride layer between the doped silicon substrate and the refractory metal silicide conductive layer. Dopant out-diffusion is further retarded, and contact resistance lowered, by adding a thin layer of refractory metal between the refractory metal nitride layer and the silicon substrate.
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