Pulsed plasma process for treating a substrate
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United States of America Patent
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Apr 25, 1989
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N/A
app pub date -
Nov 3, 1987
filing date -
Mar 3, 1984
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Expired
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Abstract
In a pulsed radio frequency plasma deposition process the pulse repetition frequency is matched to the gas exchange rate. This is achieved by using a pulse width of 50 to 500 microseconds and a pulse repetition rate corresponding to the time within which gas is exchanged in the reaction region.
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