EEPROM programming switch
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United States of America Patent
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Apr 18, 1989
Grant Date -
N/A
app pub date -
Jan 20, 1988
filing date -
Jan 20, 1988
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
An EEPROM programming switch includes a first enhancement mode field effect transistor interconnected between a word line and a programming voltage potential, and a second enhancement mode field effect transistor connected between a charge pump node and the programming voltage. The gate electrode of the first transistor is connected to the charge pump node and the gate electrode of the second transistor is connected to the word line. Decoding means is providing for preventing charge accumulation of the word line when the word line is not selected and for permitting charge accumulation of the word line when the word line is selected for programming.
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