Semiconductor nonvolatile memory
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United States of America Patent
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Apr 11, 1989
Issued Date -
N/A
app pub date -
Feb 9, 1987
filing date -
Mar 7, 1983
priority date (Note) -
Expired
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Abstract
A floating gate type semiconductor non-volatile memory injects carriers from a carrier supply region to a floating gate by a phenomenon called 'punch-through' injection in which a space charge region is formed in a semiconductor substrate between the carrier supply region and a carrier injection region so as to accelerate the carriers and inject them into the floating gate without forwardly biasing the carrier injection region or the substrate.
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